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Semiconductor Pumping Systems for Solid State Lasers

#2271


Development and Investigation of Pumping Systems for Solid State Lasers Based on Semiconductor Laser Bars and Stacks

Tech Area / Field

  • PHY-OPL/Optics and Lasers/Physics

Status
3 Approved without Funding

Registration date
06.08.2001

Leading Institute
NIIEFA Efremov, Russia, St Petersburg

Supporting institutes

  • VNIIEF, Russia, N. Novgorod reg., Sarov\nPO Sever, Russia, Novosibirsk reg., Novosibirsk

Collaborators

  • Prima Industrie, Italy, Collegno\nTRW Inc. / Space and Technology Division, USA, CA, Redondo Beach

Project summary

The proposed project is a prolongation of ISTC Project #377. The goal of the project is to find methods to decrease the cost of semiconductor sources for laser pumping, to manufacture such sources and to create effective diode pumping systems for Solid State Lasers (DP SSL).


Generally, the commercial output of DPSSL is now limited to medium power lasers. The reason for this limitation is the high manufacturing cost of laser diodes (LD) used for laser pumping.
The present project is directed to minimize the manufacturing cost of high power DPSSL. There are two main ways to decrease the cost of high power LD:
- To use inexpensive Liquid Phase Epitaxy (LPE) technology to manufacture LD semiconductor crystals;
- To create simpler and practically more feasible cooling heatsinks for effective heat removal from LD.
The main results achieved after performance of Project #377 are as follows:
1. 10W Al free LD bars have been manufactured by means of LPE technology. The further development of LPE technology is established to improve the quality of semiconductor crystals and to achieve 20W LD bar output.
2. Inexpensive and effective cooling heatsinks for LD bars have been developed and manufactured on the basis of metal porous materials.
3. The modern experimental basis for energy, spectral, temporal and spatial measurements has been created for LD and SSL testing. The LD and LD bars, developed in framework of Project #377, have been tested.
4. Software has been developed for computer simulation of the DPSSL processes. This software was modified, after comparison with published experimental results. The computer simulation of various versions of DPSSL schemes was performed.
The proposed prolongation of Project #377 involves the manufacture of inexpensive and advanced main parts of DPSSL. As a result of this stage we suggest the creation of an experimental sample of the semiconductor pumping system for high power DPSSL. The developed 20W output LD bars will be used as pumping sources.
The following main problems have to be solved during execution of this project:
1. To develop and manufacture 20W power Al free LD bars by means of LPE technology.
2. To develop the assembling technology for 100W power LD stacked array.
3. To develop the semiconductor pumping source for high power DPSSL.
4. To create an experimental sample of the semiconductor pumping system for high power DPSSL and to investigate its efficiency.

To solve these problems the following tasks are required:

1. Research and development to improve LPE technology and, therefore, to achieve high quality of grown heterostructures and to increase LD output power.
2. To develop a more effective cooling heatsink for LD bars and stacked arrays
3. To improve the technology of soldering semiconductor crystals to the cooling heatsink
4. To manufacture a number of 20W power LD bars for the DPSSL pumping module
5. To develop the technology for the assembly of LD bars to LD stacks for manufacturing the experimental 100W output LD stacked array
6. To develop the power supply and cooling system for laser diode bars
7. To model the pumping module for DPSSL and to test its radiating characters
8. To design and manufacture the pumping module and experimentally test its efficiency.
The executive project team consists of three Russian organizations: SRIEA, RFNC-VNIIEF and PS “SEVER”. The staff of SRIEA & RFNC-VNIIEF has considerable experience in the development of laser systems and laser beam diagnostics. The staff of PS “SEVER” is comprised of skilled technicians in semiconductor epitaxy and in the D&M of LDs.
The proposed investigation is of an applied nature. The performed developments will provide new knowledge and practical methods to create high-power semiconductor laser sources of radiation and to construct high power DPSSL. If the main project goal, an essential decrease in DPSSL cost, is reached, the results of the work will have a practical, as well as a scientific importance. The more effective and reliable DPSSLs may become an alternative to lamp-pumped SSL and high-power СО2 lasers on the laser market. Moreover, the experience obtained by the executive team facilitates the development of a commercial version of high-power DPSSL.
The project is in full agreement with ISTC objectives, including the following:
- Involvement of military equipment specialists in the development of peaceful products, and their integration into the international scientific community;
- Support of new applied investigations in laser techniques, to achieve state-of-the-art scientific information for interested parties;
- Commercial activity for D&M of DPSSLs.

During the course of the Project the involvement of the collaborator will take the following form:
- Information exchange, checking of obtained results and discussions;
- Organization of the joint experiments;
- Organization of workshops;
- Technical control of project activity, support for the organization of international meetings


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