Quantum Well Mid-Infrared Lasers
Asymmetric III-V/II-VI Hybrid Quantum Well Heterostructure Lasers for Mid-Infrared Spectral Range
Tech Area / Field
- PHY-SSP/Solid State Physics/Physics
3 Approved without Funding
Russian Academy of Sciences / Physical Technical Institute, Russia, St Petersburg
Project summaryThe main objective of this proposal is to fabricate and study asymmetric laser heterostructures with various width of quantum well in an active layer, and to investigate variation in emission parameters (temperature dependence, luminescence intensity, emission spectra etc.) The new physical and technological approach consists of combining III-V and II-VI compounds grown by MBE in one hybrid asymmetric laser structure, based on Al(Ga)Sb/InAs/Cd(Mg)Se. This approach allows one to achieve large band offsets (DEc, DEv) and to provide strong carrier and good optical confinement. As an alternative, asymmetric III-V laser structures based on GaInAsSb/InAsSbP with high P content will also be grown by MOCVD. In the proposed model laser structure, strong overlapping of wave functions is realized at the interface of the active layer. This leads to a higher gain comparable with conventional type I lasers, but with strong suppression of injection and non-radiative losses.
Our goal is to find an optimal solution (both theoretically and experimentally) of the superposition problem (direct and indirect radiative recombination) in order to maximize the quantum efficiency of mid-IR emission at room temperature. Theoretical calculation of the probability of direct and indirect radiative recombination dependence on quantum well size and structure design will be performed. The proposed hybrid asymmetric structure affords good carrier localization and combines the advantages of double heterostructure lasers and type II lasers. Low threshold currents and their weak temperature dependence is expected. This approach will allow one to create mid-IR diode lasers operating in the spectral range 3-6 mm at room temperature.
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