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Ferromagnetic Semiconductors for Spin Electronics

#G-1398


Development of the Laboratory Technology of Room Temperature Ferromagnetic Semiconductor Materials Suitable for Use in Devices of Spin Electronics

Tech Area / Field

  • MAT-OTH/Other/Materials
  • PHY-SSP/Solid State Physics/Physics

Status
3 Approved without Funding

Registration date
21.02.2006

Leading Institute
Tbilisi State University, Georgia, Tbilisi

Supporting institutes

  • State Research and Design Institute of Rare-Metal Industry, Russia, Moscow\nMoscow State University / Department of Physics, Russia, Moscow

Collaborators

  • Queen Mary, University of London, UK, London\nCNRS / Laboratoire de Physique des Solides et de Cristallogenese, France, Meudon

Project summary

This project proposes the development of the laboratory technology and preparing the pilot samples of room temperature ferromagnetic semiconductors suitable for use in devices of the new electronic technique area – spin electronics. Hitherto developed in several laboratories ferromagnetic semiconductors, mainly on the base of AIIIBV compounds, keep the ferromagnetic ordering only at low temperatures. These materials have not also got at room temperature the sufficient level of other necessary parameters, the major between them is the polarization degree of electron spins in material. The commercial samples of ferromagnetic semiconducting materials for spin electronics are absent.

It is intended in frames of the project to synthesize film semiconducting materials on the base of metal IV-group oxides and silicon doped with transition metal impurities, as well as to create the samples of semiconducting silicon implanted by these impurities, having ferromagnetism at above room temperature. The properties of these samples will be comprehensively investigated, and on the base of this study the laboratory technology will be developed and pilot samples will be prepared of the materials with parameters necessary for its use as effective spin injectors in spin electronics devices.

The investigation of the materials properties will be carried out with application the techniques of Precise XRD Analysis, Local Energy Dispersive X-ray method, Optical, Auger- and Photoelectron spectroscopy, Deep Level Spectroscopy, EXAFS, Atomic Force- and Tunnel Microscopy, Vibrating Sample Magnetometry and Magnetooptics. The technique of high frequency magnetron sputtering with films deposition on the lattice parameter compatible substrates will be chosen as the main one. The deposited films parameters will be compared with the results of techniques of ion implantation and laser ablation at the setting with two crossed molecular beams. The last technique ensures deposition onto a substrate only the high-dispersion fraction of a pulverized material and therefore ensures a high crystal perfection of the deposited material. On the base of this comparison the optimized technology of ferromagnetic film semiconductors for spintronics will be developed.

It must be mentioned, that all techniques and equipment listed above are the property of the institutions participating in the mentioned project. Most of them are not new, but still in good conditions. That is why practically we are not demanding the equipment support from ISTC Center.


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The International Science and Technology Center (ISTC) is an intergovernmental organization connecting scientists from Kazakhstan, Armenia, Tajikistan, Kyrgyzstan, and Georgia with their peers and research organizations in the EU, Japan, Republic of Korea, Norway and the United States.

 

ISTC facilitates international science projects and assists the global scientific and business community to source and engage with CIS and Georgian institutes that develop or possess an excellence of scientific know-how.

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