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Ferroelectric Films in Radioelectronics

#1708


Ferroelectric Film Structures for Application in Radioelectronic Devices

Tech Area / Field

  • INF-ELE/Microelectronics and Optoelectronics/Information and Communications
  • INF-SIG/Sensors and Signal Processing/Information and Communications
  • PHY-SSP/Solid State Physics/Physics
  • PHY-RAW/Radiofrequency Waves/Physics
  • PHY-ANU/Atomic and Nuclear Physics/Physics
  • SAT-OTH/Other/Space, Aircraft and Surface Transportation

Status
8 Project completed

Registration date
12.12.1999

Completion date
09.10.2003

Senior Project Manager
Komarkov D A

Leading Institute
St Petersburg Electrotechnical University, Russia, St Petersburg

Supporting institutes

  • Russian Academy of Sciences / Physical Technical Institute, Russia, St Petersburg\nVNIIEF, Russia, N. Novgorod reg., Sarov

Collaborators

  • Tokai University / Department of Communication Engineering, Japan, Kanagawa\nINOSTEK Inc., Korea, Geonggi

Project summary

Normal;Iau?iue3;The main purpose of the project consists in fabrication of tunable radioelectronic devices based on ferroelectric film (FEF) structures. The implementation of the purpose is achieved by development of the processing route of FEF structures, application of complex layer diagnostics based on back scattering of nuclear particles and elaboration of microwave device topologies. Nowadays most perspective FEFs for applications in microwave electronics are the barium and strontium titanates - BaxSr1-xTiO3 - (BSTO), therefore main attention of the project is concentrated on this material. Epitaxial and polycrystalline BSTO films are the perspective basis for competitive microwave devices having a set of the advantages in comparison with traditional semiconductor and ferrite analogs. The advantages of FEF devices are stipulated by high speed and accuracy of signal processing which are combined with significant lowering of overall dimensions and cost of microwave devices. There are two groups of the developing devices: tunable band filters, modulators, delay lines and the devices tuning a phase and velocity of microwave signal - phase shifters and the scanning antennas.

The main improvement of FEF preparation process is associated with a decrease of charged defect density in BSTO films and the elimination of superfluous space charge at the electrode/ferroelectric interface. Complex diagnostics including a modified Rutherford method - medium energy ion back scattering (MEIBS) is used for an analysis of FEF growth and patterning process. For development of effective FEF diagnostics it is necessary to enhance the equipment characteristics stipulated by the detectors registering scattered irradiation. Therefore, one of the tasks of the project is devoted to elaboration of the detectors distinguished by highest resolution and sensitivity, which would be able to determine the concentration of such light components as oxygen in FEF structures.

The serious FEF advantage is high radiation resistance, which is necessary for radioelectronic components mounted on a satellite board. However, the detailed investigations of radiation effect on the properties of epitaxial BSTO films were not carried out yet. A task of the project is associated with research of radiation stability of the FEFs and fabricated radioelectronic devices. The radiation acting on the satellite in nearest space is basically consisted from energetic protons, electrons and rigid photon flows. Thus the experiments on radiation stability of the radioelectronic devices has to be carried out with these kinds of radiation and the radiation generated in the accelerators.

The importance of the proposed project is determined by the following: (i) - the results of research of growth kinetics of epitaxial perovskite films and defect formation in layered structures are the scientific contribution to solid-state physics and electronics; (ii) – the technique of definition of defect concentration in perovskite films could be used for diagnostics of various oxide film structures and it has applied meaning; (iii) the tested models of radioelectronic devices have practical value for development of wireless communication systems; and it could be used in stationary, mobile and satellite radio stations and in the linear accelerators.


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