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Diamond Growing Technology


Research of Ultradisperse Diamonds as Regards the Diamond Crystal Growing Technology, i.e. the Process of Advanced Material Obtaining for the Future Applications in Electronics.

Tech Area / Field

  • MAT-SYN/Materials Synthesis and Processing/Materials

3 Approved without Funding

Registration date

Leading Institute
VNIIEF, Russia, N. Novgorod reg., Sarov

Supporting institutes

  • Karpov Institute of Physical Chemistry, Russia, Moscow\nIGEM (Geology & Mineralogy), Russia, Moscow

Project summary

The aim of this project is to develop the monocrystalline diamond growing technology siutable for extensive use in the modem electronics and other high technologies.

The consumption growth of natural diamonds in the high technologies of modem industry is correlated with the growth of fundamental researches of diamond and its physical properties.

One of the main factors restraining natural diamonds wide application in electronics is their great morphological types persity and unstable physical properties inside each monocrystal volume. It is connected with the changing phisical and chemical conditiones during the processes of crystal conception, growth of central , intermediate and peripheral parts of natural diamonds.

Synthetic diamonds obtaind from the molten metal carbon solution at a high temperature and pressure have the same crystalline structure as natural diamonds but differ from them as regards the additive composition and defect types. The main additives are nitrogen and metal inclusions. The principal aim of synthetic diamond fusion is to get monocrystalline diamonds with the minimal structure. The project is aimed at the said problem solution.

This project offers to develop basic principles of diamond crystal growing technology for electronic industry based on UDD (nanodiamonds made by means of explosive technology).

The most obvious approach to the problem of diamond fusion is based on the natural diamond formation mechanism. However, curently there is no definitive opinion about a specific mechanism causing the diamond formation. Moreover no existing hypotesis describing the diamond formation mechanism under natural conditions can explain for the information generally known concerning natural diamonds location and properties. Some of them are even contradictory to the existing facts.

In the project there is proposed the investigation of a new diamond formation mechanism based on the hypotesis of crystal growth in the molten silicates and metalsilicates under conditions similar to the earth surface. It is intended to use UDD, obtained by the explosive technology, as the initial material for the crystal formation.The proposed in the project mechanism of diamond formation does not contradict to any known facts of natural diamond properties and distribution. The solution of this problem leads to growing artificial diamonds with the controlled additives and defects distribution inside the crystal volume. Basically, this is the main step to a wide application of diamonds in electronics and other high technologies in future.

Expected results.

As a result of the research activities, there are to be developed physical and technical principles of obtaining semiconductive artificial diamond crystals from initial nanodiamonds. Crystal samples grown in accordance with this principles should be also obtained. The results which should be obtained during proposed project will be presented in reports, publication, lectures on conferences. An international patent for a invention will be taken out for a new technological process.

The fulfilment of the project shall facilitate obtaining artificial diamonds providing for the controlled additives and defects distribution inside the crystal volume, which is the main step for their wide application in electronics and other high technologies .


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