Nanosized and Thin Films Oxides Phosphors
New Nanosized and Thin Films Oxides Phosphors for Visualization and Emitting Flat Display
Tech Area / Field
- MAT-ALL/High Performance Metals and Alloys/Materials
2 Submitted to Parties for Board Decision
Azerbaijan National Academy of Sciences / Physics Institute, Azerbaijan, Baku
- Institute of Microelectronics Technology and High Purity Materials, Russia, Moscow reg., Chernogolovka
Project summaryThe investigation of the emission centres and energy transfer process in new wide gap electroluminescent materials and nanostructures based on ternary compounds doped with different rare-earth elements are planned. The properties of the luminescent centres in high electrical fields, the ionization processes, the processes of energy transfer between the centres and the quantum dots, the efficiency of the recombination emission would be analyzed. The processes of energy transfer which can be used for the change of emission colour and for the increase of the brightness of electroluminescent structures, as well as the processes of non-radiative recombination including concentration and thermal quenching would be studied. The limits of the solubility of the activating impurity, forming the emission centers in the base material, as well as the influence of the crystallinity and co-activating impurity on these limits would be investigated.
It should be mentioned that the probability of the creation of binary defect complexes and donor-acceptor pairs in wide gap compounds is rather high. The creation of such complexes results both in the modification of the emission spectra and in the change of the activation energy of luminescent centres. Due to this fact, the carrier distribution between the centers energy levels which are the generators of the photons for the photo-, and electroluminescence is changing.
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