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Erbium-Doped Silicon


Erbium-Doped Silicon. New Semiconductor Material for Nonlinear Optics.

Tech Area / Field

  • MAT-SYN/Materials Synthesis and Processing/Materials

8 Project completed

Registration date

Completion date

Senior Project Manager
Kondratenkov Yu B

Leading Institute
Russian Academy of Sciences / Physical Technical Institute, Russia, St Petersburg

Supporting institutes

  • NPO Orion, Russia, Moscow


  • Lehigh University, USA, PA, Bethlehem

Project summary

Modern semiconductor electronics is based nearly exclusively on silicon. The only goal which cannot be reached with the use of silicon is the generation of optical radiation with an intensity satisfying the demands of various applications.

The target of the present project is the development of physical foundations permitting to create a new class of emitting devices on the basis of silicon. The accomplishment of this task will revolutionize the semiconductor electronics since it permits to apply a large variety of technologic methods used in silicon electronics to create radiation sources and amplifiers, to develop solid state transmitting module with emitting elements and electronics in the same crystal, to fabricate elements of integral optics from silicon only.

The goal stated is achieved in the present project by an initiation of work on new material - erbium-doped silicon (Si:Er). The use of silicon enables the pumping of radiation transition while emission occurs in erbium ions due to intra-ion transitions between the excited and the ground state. The realization of the project targets demands the solution of the following problems: (a) development of fabrication technology of Si:Er structures with use of ion implantation, epitaxial and diffusion methods; (b) advancement of defect engineering in technology of Si:Er structures; (c) detailed studies of electronic mechanism of excitation of erbium ions and complexes and reverse processes; (d) creation of elements and proof of them in transmission lines.


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