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Silicon Carbide Semiconductor Structures

#0331


Development of Technology of Production of Some Temperature and Radiation Resistant sic-based Semiconductor Structures

Tech Area / Field

  • INF-ELE/Microelectronics and Optoelectronics/Information and Communications

Status
3 Approved without Funding

Registration date
04.01.1995

Leading Institute
Kurchatov Research Center, Russia, Moscow

Supporting institutes

  • MIFI, Russia, Moscow\nRussian Academy of Sciences / Physical Technical Institute, Russia, St Petersburg

Project summary

The aim of this project is development of technology of production of some temperature and radiation resistant semiconductor structures-ohmic contacts, Schottky barriers, p/n junctions. The work includes some search experiments-investigation of possibility of conduction of radiation induced diffusion, plasmachemical treatment of SiC, production of quality metal-semiconductor structures as well as investigation of influence of technological impurities and temperature and radiation induced defects on the parameters of semiconductor structures.


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