Silicon Carbide Semiconductor Structures
Development of Technology of Production of Some Temperature and Radiation Resistant sic-based Semiconductor Structures
Tech Area / Field
- INF-ELE/Microelectronics and Optoelectronics/Information and Communications
3 Approved without Funding
Kurchatov Research Center, Russia, Moscow
- MIFI, Russia, Moscow\nRussian Academy of Sciences / Physical Technical Institute, Russia, St Petersburg
Project summaryThe aim of this project is development of technology of production of some temperature and radiation resistant semiconductor structures-ohmic contacts, Schottky barriers, p/n junctions. The work includes some search experiments-investigation of possibility of conduction of radiation induced diffusion, plasmachemical treatment of SiC, production of quality metal-semiconductor structures as well as investigation of influence of technological impurities and temperature and radiation induced defects on the parameters of semiconductor structures.
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